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  • MV-3T4G3D - Samsung 8GB Kit 2 X 4GB DDR3-1600MHz PC3-12800 non-ECC Unbuffered CL11 204-Pin SoDimm 1.35V Low Voltage Dual Rank Memory

MV-3T4G3D - Samsung 8GB Kit 2 X 4GB DDR3-1600MHz PC3-12800 non-ECC Unbuffered CL11 204-Pin SoDimm 1.35V Low Voltage Dual Rank Memory

Brand:

Samsung

SKU:

MV-3T4G3D

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Price:
$107.72
$87.58
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Samsung 8GB DDR3-1600MHz Memory Kit for Laptops - Dual Rank, Low Voltage, 204-Pin SoDimm - MV-3T4G3D

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Price:
$107.72
$87.58
You save $20.14
Samsung 8GB DDR3-1600MHz Memory Kit for Laptops - Dual Rank, Low Voltage, 204-Pin SoDimm - MV-3T4G3D

MV-3T4G3D - Samsung 8GB Kit 2 X 4GB DDR3-1600MHz PC3-12800 non-ECC Unbuffered CL11 204-Pin SoDimm 1.35V Low Voltage Dual Rank Memory

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Description

MV-3T4G3D - Samsung 8GB Kit 2 X 4GB DDR3-1600MHz PC3-12800 non-ECC Unbuffered CL11 204-Pin SoDimm 1.35V Low Voltage Dual Rank Memory

Details

Brand
Samsung
Weight
2.00 LBS
Package Type
Retail
Package Quantity
1
RAM Speed
1600 MHz
Signal Type
Unbuffered
Error Identifying
ECC
Memory Technology
DDR3 SDRAM
Memory Capacity
8 GB
RAM Standard
DDR3-1600/PC3-12800
Column Access Strobe (CAS)
CL11
Product Voltage
1.35V
Quantity of Pins
204-pin
RAM Genre
SoDIMM
Rank
Dual Rank x8
Eco Friendly
Yes
Compliance Standards
EU RoHS,FCC
Assembly Required
Yes

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